Effect of Parasitic Resistance on Mobility in Laser Crystallized LT poly-Si TFTs

• CHANG Shih-Chang

  Electronics Research and Service Organization Industrial Technology Research Institute

• WU Chung-Chih

  Electronics Research and Service Organization Industrial Technology Research Institute

• LU I-Min

  Electronics Research and Service Organization Industrial Technology Research Institute

• CHEN Yeong-E

  Electronics Research and Service Organization Industrial Technology Research Institute

抄録

Effect of parasitic resistance (Rp) on the mobility in laser-crystallized low-temperature (LT) poly-Si thin film transistors (TFTs) of various channel lengths was investigated. The minimum off current at Vd=10V in these TFTs is scaleable and is about 0. 15 pA/μm. Significant reduction of mobility was observed in short channel devices due to porasitic resistance. Based on our analysis of the Rp requirement for high-performance short-channel LT poly-Si TFTs, to avoid significant degradation in the mobility for the mobility larger than 300 cm^2/Vs, it 's necessary to keep Rp below 200 ohm.

収録刊行物

• 電子情報通信学会技術研究報告. EID, 電子ディスプレイ

  電子情報通信学会技術研究報告. EID, 電子ディスプレイ 98 (666), 121-124, 1999-03-19

  一般社団法人電子情報通信学会

キーワード

• LT poly-Si TFT
• parasitic resistance
• excimer laser
• mobility reduction
• contact resistance
• channel length

詳細情報

• CRID: 1573105977228452608
• NII論文ID: 110003269335
• NII書誌ID: AN10060775
• 本文言語コード: en
• データソース種別:
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