Photocurrent Amplification Using Lateral Bipolar Effect of SOI MOSFET Structure

• Uryu Yuko

  Center for Microelectronic Systems, Kyushu Institute of Technology

• Asano Tanemasa

  Center for Microelectronic Systems, Kyushu Institute of Technology

Bibliographic Information

Other Title

• SOI-MOS素子による光電流増幅
• SOI MOS ソシ ニ ヨル コウデンリュウ ゾウフク

Abstract

A new photodetection device composed of an SOI MOSFET and a photodiode is proposed and the fundamental operation of the device is experimentally studied. The photodiode is connected to the floating body of the SOI MOSFET. This device was targeted at amplification of diode photocurrent by using the lateral bipolar action of the SOI MOSFET. We have investigated devices composed of a partially depleted p-channel SOI MOSFET and a n^+p photodiode which was formed in the substrate Si of a SIMOX wafer. Photo-response in terms of wavelength and intensity, and current gain of the composite device are investigated. It is demonstrated that the current amplification factor increases with decreasing the gate length of the SOI MOSFET and the drain current can be about 70 times as much as the diode photocurrent when the gate length is 0.8 μm.

Journal

• ITE Technical Report

  ITE Technical Report 24.37 (0), 67-72, 2000

  The Institute of Image Information and Television Engineers

Keywords

• photodetection device
• composite device
• SOI
• MOSFET
• lateral bipolar transistor
• floating body effect

Details

• CRID: 1390001204524289152
• NII Article ID: 110003269529
• NII Article ID: 110003687855
• NII Article ID: 10019078436
• NII Book ID: AN1059086X
• ISSN: 09135685
• ISSN: 24241970
• ISSN: 13426893
• DOI: 10.11485/itetr.24.37.0_67
• NDL BIB ID: 5476924
• NDL BIB ID: 5462210
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5476924
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5462210
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • CiNii Articles
• Abstract License Flag: Disallowed