高効率量子鍵配送に向けた半導体単一光子光源の作製  [in Japanese] Fabrication of semiconductor-based single photon emitters for efficient quantum key distribution  [in Japanese]

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Author(s)

Abstract

単一光子の不可分性に基づく極めて高い秘匿性を持つ高効率量子鍵配送の実現に向け、シリコン単一光子検出器の検出感度が高い波長での光子生成が可能な半導体量子ドットを形成し、単一の励起子遷移による高純度の単一の光子数状態にある光子発生を確認した。応用上、複数光子の同時発生を抑制する必要があるが、多励起子状態の関与が単一光子発生動作に大きな影響を与えることを、光子同時計数確率の励起光強度依存性の検討により明らかにした。さらに、励起子分子-励起子の時系列的遷移過程による光子対発生の検証についても実施した。

For an efficient quantum key distribution, highly pure single-photon generation from a semiconductor quantum dot was demonstrated at wavelength in which a Si-avalanche photodiode single-photon detector has high quantum efficiency. Single photon in number state associated with single exciton transition was confirmed by photon correlation measurements. Excitation power dependence of photon coincidence counts revealed that involvement of multi-exciton states affected the photon emission property and gave rise to degradation of purity. Photon pair generation due to biexciton-exciton cascaded transition was also demonstrated.

Journal

  • IEICE technical report. EMD

    IEICE technical report. EMD 105(245), 55-59, 2005-08-19

    The Institute of Electronics, Information and Communication Engineers

References:  31

Codes

  • NII Article ID (NAID)
    110003293981
  • NII NACSIS-CAT ID (NCID)
    AN10383978
  • Text Lang
    JPN
  • Article Type
    ART
  • ISSN
    09135685
  • NDL Article ID
    7434247
  • NDL Source Classification
    ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
  • NDL Call No.
    Z16-940
  • Data Source
    CJP  NDL  NII-ELS 
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