Carrier conduction properties in Alg_3 thin films

• Fujimori Shigeo

  Department of Electrical Engineering,Kyoto University

• Yanagisawa Masaki

  Department of Electrical Engineering,Kyoto University

• Fujita Shizuo

  Department of Electrical Engineering,Kyoto University

• Fujita Shigeo

  Department of Electrical Engineering,Kyoto University

Bibliographic Information

Other Title

• Alg_3薄膜のキャリア伝導

Abstract

Energetic scheme and conduction mechanism of carriers in an ITO, Alq_3/Al structure were investigated by several electrical and optical measurements.Photocurrent measurements revealed the energy gap of Alq_3 as about 2.6 eV,and the potential barrier at AI/Alq_3 interface as about 1.5 eV.Carrier conduction mechanism was discussed from current-voltage measurements and was well explained by Frenkel-Poole conduction associated with traps,whose activation energy was about 0.7 eV,in Alq_3 layers.Absorption edge in optical transmission was almost equal to the enrgy gap revealed by photocurrent measurements,while photoluminescence appeared as a broad peak at the enrgy lower than the energy gap,suggesting various relaxation processes in recombination.

Journal

• Technical report of IEICE. OME

  Technical report of IEICE. OME 94 21-, 1994

  The Institute of Electronics, Information and Communication Engineers

Keywords

• ITO
• lq_3
• l structure
• energetic scheme
• conduction mechanism
• energy gap

Details

• CRID: 1570009752536880896
• NII Article ID: 110003300894
• NII Book ID: AN10013061
• Text Lang: ja
• Data Source:
  • CiNii Articles