自己集合体化技術を用いた超低誘電率多孔質シリカ膜  [in Japanese] Novel Self-Assembled Ultra-Low-k Porous Silica Films with High Mechanical Strength for 45nm BEOL Technology  [in Japanese]

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Author(s)

Abstract

自己集合体化技術を用いて新規な超低誘電率多孔質シリカ膜を開発した.得られる多孔質シリカ膜の機械特性はテトラメチルシクロテトラシロキサン(TMCTS)処理により、比誘電率と独立に強化する事が可能である.それにより弾性率8GPaと比誘電率2を同時に併せ持った高強度多孔質シリカ膜を実現した.十分に高い機械的強度を有した超低誘電率層間絶縁膜/銅ダマシン配線構造を実証した.

Novel ultra-low-k porous silica films were developed by use of a self-assembly technology. The mechanical properties of the porous silica films could be reinforced independently of the dielectric constant by introducing tetramethyl-cyclo-tetra-siloxane (TMCTS) treatment. High modulus porous silica films with the elastic modulus of 8 GPa and dielectric constant of 2 can be achieved simultaneously. Ultra-low-k/Cu damascene with sufficient mechanical strength was demonstrated for 45 nm BEOL technology.

Journal

  • Technical report of IEICE. SDM

    Technical report of IEICE. SDM 103(638), 41-45, 2004-01-26

    The Institute of Electronics, Information and Communication Engineers

References:  5

Codes

  • NII Article ID (NAID)
    110003309000
  • NII NACSIS-CAT ID (NCID)
    AN10013254
  • Text Lang
    JPN
  • Article Type
    ART
  • ISSN
    09135685
  • NDL Article ID
    6888835
  • NDL Source Classification
    ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
  • NDL Call No.
    Z16-940
  • Data Source
    CJP  NDL  NII-ELS 
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