Limitation for contact hole windows in an attenuated phase shift mask with i-line lithography

  • HUR Ik-Boum
    Hyundai Electronics Industries Co., Ltd., Semiconductor R&D Labs. I
  • AHN Chang-Nam
    Hyundai Electronics Industries Co., Ltd., Semiconductor R&D Labs. I
  • BAIK Ki-Ho
    Hyundai Electronics Industries Co., Ltd., Semiconductor R&D Labs. I

この論文をさがす

抄録

As the device density increases, the space sizes between patterns as well as the pattern size are getting narrower. High density pattern cause some problems, such as, proximity effect, poor pattern fidelity, and narrow process margin. The performance of the contact hole array has been investigated by the simulation and the experiment using an attenuated Phase Shift Mask (PSM) and a conventional mask with the variable partial coherence factors and numerical aperture (NA) steppers. As the contact hole to contact hole space size decreases, the process margin decreases and the side lobe effect increases compare to that of isolated contact hole pattern. In this paper, the relation between contact hole to contact hole space size and the optimum transmittance have been studied.

収録刊行物

キーワード

詳細情報 詳細情報について

  • CRID
    1571135652442734464
  • NII論文ID
    110003309745
  • NII書誌ID
    AN10013254
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

問題の指摘

ページトップへ