シード補強銅めっきを用いた銅配線埋設技術  [in Japanese] Two-step Copper Electroplating Technique using Seed Enhancement step  [in Japanese]

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Author(s)

Abstract

サブ0.1ミクロン世代の銅配線埋設に向けて、シード補強銅めっきを用いた2段めっき銅配線埋設技術を開発した.アルカリ金属フリーのピロりん酸銅浴を用いてシード補強銅めっきを行うことにより、より薄いスパッタ銅シードに対して微細パターンの埋設を実現し、また、形成したデュアルダマシン配線においてはエレクトロマイグレーション耐性の向上効果を確認した.

We have developed the two-step copper (Cu) electroplating (EP) technique using alkali-metal-free copper pyrophosphate bath for Cu seed enhancement EP step. Alkali-metal-free copper pyrophosphate bath realizes conformal thickening of thin Cu seed layer without dissolution of Cu seed layer due to high resistivity, high polarization, and low Cu dissolubility of the bath. The two-step technique brings excellent yield of the via-chain resistance and good EM resistance in comparison with copper sulfate EP technique. Thus, two-step electroplating is a promising technique for future ULSIs fabrication beyond the limitation of PVD seed technology.

Journal

  • Technical report of IEICE. SDM

    Technical report of IEICE. SDM 101(430), 7-11, 2001-11-09

    The Institute of Electronics, Information and Communication Engineers

References:  2

Codes

  • NII Article ID (NAID)
    110003310933
  • NII NACSIS-CAT ID (NCID)
    AN10013254
  • Text Lang
    JPN
  • Article Type
    ART
  • ISSN
    09135685
  • NDL Article ID
    6012311
  • NDL Source Classification
    ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
  • NDL Call No.
    Z16-940
  • Data Source
    CJP  NDL  NII-ELS 
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