書誌事項
- タイトル別名
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- Evaluation of Performance of Metal Oxide-silicon Semiconductor Field Effect Transistor (MOSFET) Dosimeter
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抄録
The JARP level dosimeter is the most suitable for absorbed dose determination in radiotherapy because of its high accuracy. However, in measuring the dose of an extremely small field, a dosimeter with a smaller active region is required. The active region of the MOSFET dosimeter is very small, having a volume of just 0.02mm^3. In this study, we evaluated the performance of MOSFET dosimeters with two different sensitivities and examined the usefulness of the MOSFET dosimeter in stereotactic radiosurgery. Using the high-sensitivity MOSFET dosimeter, we were able to reduce the experimental error of absorbed dose (<±1.8%), and, by correcting the sensitivity, we could use it as a field dosimeter. By turning detectors inside out, we could reduce directional dependence (<±1.8%). Correction was necessary in the TMR determination because peak depth shifts according to the material of the detector. In the determination of the dose distribution in the penumbra, the resolution of the MOSFET detectors was equal to that of the diamond detector. In the determination of OPF for the extremely small field, better results were obtained with MOSFET than with other small detectors. The high-sensitivity MOSFET dosimeter could properly evaluate the dose of an extremely small field and will be useful in dosimetry of the maximum dose of the field center in stereotactic radiosurgery.
収録刊行物
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- 日本放射線技術学会雑誌
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日本放射線技術学会雑誌 57 (2), 234-242, 2001
公益社団法人 日本放射線技術学会
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詳細情報 詳細情報について
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- CRID
- 1390001206390418048
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- NII論文ID
- 110003439401
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- NII書誌ID
- AN00197784
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- ISSN
- 18814883
- 03694305
- http://id.crossref.org/issn/03694305
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
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- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可