A STUDY ON MAGNETIC DOMAIN STRUCTURE AND DOMAIN WALL STATE IN SMALL MR SENSOR

• Yu Jinyue

  Information Storage Research Center, Shanghai Jiao Tong University

• Zhou Di

  Information Storage Research Center, Shanghai Jiao Tong University

• Zhou Yong

  Information Storage Research Center, Shanghai Jiao Tong University

• Wei Fulin

  Research Institute of Magnetic Materials, Lanzhou University

抄録

With regard to practical structure of element, the transition process of domain structure during magnetizatization reversal in MR thin film sensor has been observed and investigated by wet and dry Bitter pattern technique. It is shown that the domain wall mergence and the wall-state transition during this incoherent magnetization rotation is closely related to Barkhauson jumps in the sensor, and also it is noted that the hooklike domain that appears at the link point of sensor and leads is involved in the irreversible transition.

収録刊行物

• テレビジョン学会技術報告

  テレビジョン学会技術報告 20 (61), 55-59, 1996

  一般社団法人 映像情報メディア学会

キーワード

• magnotoresistive sensor
• magnetic domain
• domain wall
• magnetization reversal

詳細情報

• CRID: 1390001204522009344
• NII論文ID: 110003680579
• NII書誌ID: AN00352231
• DOI: 10.11485/tvtr.20.61_55
• ISSN: 24330914
• ISSN: 03864227
• 本文言語コード: en
• データソース種別:
  • JaLC
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可