Calculations of Energy Levels of Oxygen and Silicon Vacancies at the Si-SiO<SUB>2</SUB> Interface

• Iizuka Tetsuya

  Department of Electronic Engineering, Faculty of Engineering, University of Tokyo

• Sugano Takuo

  Department of Electronic Engineering, Faculty of Engineering, University of Tokyo

抄録

In order to understand physical origins of interface states in St-SiO₂ system, calculations of interface band structures on the unreconstructed and oxidized surface of Si are carried out simulating the Si-SiO₂ system by silicon surface epitaxially covered with monoatomic oxygen layer. Then modifying the model to include oxygen and silicon vacancies, localized levels associated with the vacancies are calculated using perturbation theory.<BR>It is shown that so called surface-states on a clean surface whose density is of the order of 10¹⁴ cm⁻² are completely removed away from the energy gap of Si under the complete oxidation and that the same number of localized levels exist in the energy gap of Si as that of dangling bonds of Si atom associated with the oxygen and silicon vacancies at the interface.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 12 (1), 73-79, 1973

  社団法人応用物理学会

詳細情報

• CRID: 1571135652376763648
• NII論文ID: 110003893767
• NII書誌ID: AA00690800
• ISSN: 00214922
• Web Site: http://chemport.cas.org/cgi-bin/sdcgi?APP=ftslink&action=reflink&origin=jstage2&version=1.0&coi=1:CAS:528:DyaE3sXnslaitg%3D%3D&md5=18e8af35b7ee3ea0a43b940d4ad224ba
• 本文言語コード: en
• データソース種別:
  • CiNii Articles