ESR Studies of Mn<SUP>2+</SUP> in Multicomponent Amorphous Semiconductors

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ESR measurements of Mn in Te90−xAsxGe10−ySiy glasses have been carried out. There appeared three kinds of signals: A line with g=4.3 having a hyperfine structure, a narrow line with g=2.00 and a broad line with g\simeq2. The line with g=4.3 originates from Mn2+ incorporated in the amorphous network. The hyperfine structure constant A is much smaller than that for free ions, and shows a strong covalent character of the amorphous network. The narrow line with g=2.00 originates from phase-separated Mn-O clusters associated with undesirable oxygen contamination introduced from oxide layers on the starting materials. The oxygen contamination can be removed by synthesizing the sample in an ampoule with carbon in it. The broad line with g\simeq2 is observed in the presence of a relatively large amount of Mn and it is considered to originate from phase-separated Mn-Te clusters.

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