Deep levels studies of N-free and N-doped GaP grown by TDM-CVP.

• Nishizawa Jun-ichi

  Research Institute of Electrical Communication, Tohoku University

• Koike Masayoshi

  Research Institute of Electrical Communication, Tohoku University

• Miura Kaichi

  Research Institute of Electrical Communication, Tohoku University

• Okuno Yasuo

  Semiconductor Research Institute

抄録

The energies and densities of deep levels in N-free and N-doped GaP LED depend on the applied phosphorus pressure during epitaxial growth. Especially, the deep level in N-free GaP located at E_C–E_T=0.65 eV strongly affects the brightness of emission and has close correlation with the shallow donor concentration in the n layer. The deep levels in N-doped GaP are complicated and their energies change according to the phosphorus pressure. Some of the deep levels in N-doped GaP are proposed for the complex of nitrogen.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 19 (1), 25-30, 1980

  The Japan Society of Applied Physics

キーワード

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

詳細情報

• CRID: 1390282681232424192
• NII論文ID: 110003896118
• NII論文ID: 210000020375
• NII論文ID: 130003462424
• NII書誌ID: AA00690800
• DOI: 10.1143/jjap.19.25
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/19/i=1/a=25/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可