Fabrication of SiO<sub>2</sub>Blazed Holographic Gratings by Reactive Ion-Etching
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- Matsui Shinji
- Faculty of Engineering Science, Osaka University
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- Yamato Toshiya
- Faculty of Engineering Science, Osaka University
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- Aritome Hiroaki
- Faculty of Engineering Science, Osaka University
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- Namba Susumu
- Faculty of Engineering Science, Osaka University
書誌事項
- タイトル別名
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- Fabrication of SiO2 blazed holographic gratings by reactive ion-etching.
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抄録
The Ar ion-etching technique, successfully employed to produce PMMA blazed holographic gratings, has not been applied to produce SiO2 gratings, because the etching rate of SiO2 is lower than that of AZ1350, the mask material for ion etching. In the present study a CF4 reactive ion-etching technique using a high SiO2 etching rate is developed to produce original SiO2 blazed holographic gratings. The blaze angle of gratings can be controlled easily by varying the incident angle of the ion beam. This technique appears very useful for producing blazed gratings made of various materials.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 19 (3), L126-L128, 1980
The Japan Society of Applied Physics
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詳細情報
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- CRID
- 1390001206255144832
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- NII論文ID
- 110003896434
- 210000020546
- 130003462673
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- NII書誌ID
- AA00690800
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可