Scanning Force/Tunneling Microscopy as a Novel Technique for the Study of Nanometer-Scale Dielectric Breakdown of Silicon Oxide Layer

• Fukano Yoshinobu

  Department of Physics, Faculty of Science, Hiroshima University

• Sugawara Yasuhiro

  Department of Physics, Faculty of Science, Hiroshima University

• Yamanishi Yoshiki

  Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd.

• Oasa Takahiko

  Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd.

• Morita Seizo

  Department of Physics, Faculty of Science, Hiroshima University

抄録

Scanning force/tunneling microscopy (AFM/STM) was proposed as a novel technique to investigate local dielectric breakdown voltage for the silicon oxide layer. It was manifested that this novel technique could simultaneously measure surface topography and distribution of dielectric breakdown voltage with nanometer-scale resolution. We confirmed that the dielectric breakdown voltage measured with the AFM/STM increased monotonously with the increase in oxide thickness. In addition to the above results, we observed that the oxide layer with visible defect had a lower dielectric breakdown voltage.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 32 (1), 290-293, 1993

  社団法人応用物理学会

キーワード

• dielectric breakdown
• silicon oxide layer
• AFM/STM
• AFM topograph
• current image

詳細情報

• CRID: 1573387452190113792
• NII論文ID: 110003899225
• NII書誌ID: AA10457675
• 本文言語コード: en
• データソース種別:
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