Nonvolatile Memory Based on Phase Transition in Chalcogenide Thin Film

• Nakayama Kazuya

  Department of Electrical and Computer Engineering, Faculty of Technology, Kanazawa University

• Kitagawa Toshiya

  Department of Electrical and Computer Engineering, Faculty of Technology, Kanazawa University

• Ohmura Masashi

  Department of Electrical and Computer Engineering, Faculty of Technology, Kanazawa University

• Suzuki Masakuni

  Department of Electrical and Computer Engineering, Faculty of Technology, Kanazawa University

抄録

Electrically erasable nonvolatile memories based on the reversible amorphous-crystalline phase transition were studied. In the appropriate set- and reset-conditions, more than 10⁵ repetition cycles of write/erase were attained in the memory devices composed of As–Sb–Te films. Deterioration of memory devices was caused by the phase separation due to the segregation of crystallites in the active region in the memory cells and in the peripheral area around the active region. The phase separation in the peripheral area around the active region still occurred even in the memory devices using well-designed materials. Deterioration phenomena can be greatly suppressed by the reduction of the device geometry.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 32 (1), 564-569, 1993

  社団法人応用物理学会

キーワード

• nonvolatile memory
• chalcogenide films
• reversible phase transition

詳細情報

• CRID: 1572543027259993856
• NII論文ID: 110003899281
• NII書誌ID: AA10457675
• 本文言語コード: en
• データソース種別:
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