Photolithography System Using a Combination of Modified Illumination and Phase Shift Mask

• Kamon Kazuya

  LSI Laboratory, Mitsubishi Electric Corporation

• Miyamoto Teruo

  Manufacturing Development Laboratory, Mitsubishi Electric Corporation

• Myoi Yasuhito

  Manufacturing Development Laboratory, Mitsubishi Electric Corporation

• Nagata Hitoshi

  LSI Laboratory, Mitsubishi Electric Corporation

• Kotani Norihiko

  LSI Laboratory, Mitsubishi Electric Corporation

• Tanaka Masaaki

  Manufacturing Development Laboratory, Mitsubishi Electric Corporation

抄録

Various methods have been developed to overcome the limitations in photolithography. Modified illumination and phase shift mask technologies have been developed in order to improve the depth of focus and resolution limit. We have combined these two methods and applied them to the step and repeat exposure system. Experiments using the modified illumination were carried out and subhalf-micron patterns were produced. The process latitude of 64M dynamic random access memory (DRAM) is doubled by this combination process.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 31 (12), 4131-4136, 1992

  社団法人応用物理学会

キーワード

• LSI
• photolithography
• annular illumination
• modified illumination
• resolution
• depth of focus
• PHOENEX
• PHALCOM
• phase shift mask

詳細情報

• CRID: 1570291227433197952
• NII論文ID: 110003901267
• NII書誌ID: AA10457675
• 本文言語コード: en
• データソース種別:
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