AlN Sputtered Film Properties Prepared at Low Gas Pressures by Facing Target System

• Tominaga Kikuo

  Faculty of Engineering, The University of Tokushima

• Imai Hiroshi

  Faculty of Engineering, The University of Tokushima

• Shirai Masaki

  Faculty of Engineering, The University of Tokushima

抄録

Several properties of sputtered AlN films prepared in N₂ gas by planar magnetron sputtering with facing targets were investigated. Highly c-axis-oriented films with columnar structure were obtained at the pressure range of 10⁻³ Torr of N₂ gas. Film degradations such as the decrease of the degree of c-axis orientation, film coloring, and film peeling were also observed at lower gas pressures below 1×10⁻³ Torr. From the results of optical transmittance and film composition estimation by energy-dispersion X-ray spectroscopy, these film degradation were related to the excess of N atoms in the film growth process.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 30 (10), 2574-2580, 1991

  社団法人応用物理学会

キーワード

• AlN film
• planar magnetron sputtering
• film degradation
• facing target sputtering system

詳細情報

• CRID: 1574231877108049024
• NII論文ID: 110003902024
• NII書誌ID: AA10457675
• 本文言語コード: en
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