Low-Temperature Epitaxial Growth of Si/Si_<1-x>Ge_x/Si Heterostructure by Chemical Vapor Deposition

• MUROTA J.

  Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University

• ONO Shoichi

  Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University

収録刊行物

• Jpn. J. Appl. Phys.

  Jpn. J. Appl. Phys. 33 2290-, 1994

  社団法人応用物理学会

キーワード

• Si
• Si_<1-x>Ge_x
• heterostructure
• SiH_4
• GeH_4
• CVD
• atomic-layer growth

詳細情報

• CRID: 1571417127339603712
• NII論文ID: 110003903205
• NII書誌ID: AA10457675
• 本文言語コード: en
• データソース種別:
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