Anoumoulous Dielectric Relaxation in Nickel-Doped Barium-Strontium Titanate Ceramics

• KARASAWA J.

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University

• FUKAMI Tatsuo

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University

収録刊行物

• Jpn. J. Appl. Phys.

  Jpn. J. Appl. Phys. 33 (9), 4936-4939, 1994

  社団法人応用物理学会

キーワード

• grain surface
• acceptor dopant
• oxygen vacancy
• complex defect dipole
• thermally stimulated current
• dielectric relaxation

詳細情報

• CRID: 1571135652363355136
• NII論文ID: 110003903890
• NII書誌ID: AA10457675
• 本文言語コード: en
• データソース種別:
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