Influence of Surface Melt Flow on Oxygen Inhomogeneity in Czochralski-Grown Silicon Single Crystal: Studied by Double-Layered Czochralski (DLCZ) Melt Quenching Technique.

• Kawanishi Soroku

  Kimura Metamelt Project, ERATO, JRDC, Tsukuba Research Consortium, Satellite–2, 5–9–9 Tokodai, Tsukuba, Ibaraki 300–26, Japan

• Togawa Shinji

  Kimura Metamelt Project, ERATO, JRDC, Tsukuba Research Consortium, Satellite–2, 5–9–9 Tokodai, Tsukuba, Ibaraki 300–26, Japan

• Izunome Koji

  Kimura Metamelt Project, ERATO, JRDC, Tsukuba Research Consortium, Satellite–2, 5–9–9 Tokodai, Tsukuba, Ibaraki 300–26, Japan

• Terashima Kazutaka

  Kimura Metamelt Project, ERATO, JRDC, Tsukuba Research Consortium, Satellite–2, 5–9–9 Tokodai, Tsukuba, Ibaraki 300–26, Japan

• Kimura Shigeyuki

  Kimura Metamelt Project, ERATO, JRDC, Tsukuba Research Consortium, Satellite–2, 5–9–9 Tokodai, Tsukuba, Ibaraki 300–26, Japan

抄録

The oxygen incorporation mechanism at the growth interface during Czochralski (CZ) silicon single crystal growth has been studied using melt quenching technique developed by the double-layered Czochralski (DLCZ) process. A slow crystal rotation rate of 0.5 rpm was chosen to investigate the influence of melt convection in relation to the source of oxygen on the oxygen inhomogeneity in the grown crystal. Micro-Fourier transform infrared spectroscopy (micro-FTIR) measurement and preferential etching revealed that the oxygen variation in the crystal was determined by the balance of the bulk melt with a high oxygen content and the oxygen-depleted melt from the free surface. The major cause of the periodic intake of the oxygen-depleted melt flow during one crystal rotation was probably the inhomogeneous radial temperature gradient. This suggests that thermal asymmetry in the melt is a fatal factor in oxygen inhomogeneity in the crystal. We have postulated that the equilibrium oxygen segregation coefficient is not much smaller than unity, but is rather close to it.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 34 (11), 5885-5890, 1995

  The Japan Society of Applied Physics

キーワード

• Czochralski silicon crystal growth
• melt quenching
• DLCZ
• melt convection
• rotational striation
• oxygen inhomogeneity
• surface flow
• growth interface

詳細情報

• CRID: 1390282681223263616
• NII論文ID: 210000038069
• NII論文ID: 110003904715
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.34.5885
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.34.5885
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.34.5885/pdf
• 本文言語コード: en
• データソース種別:
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