Surface Flatness of Transparent Conducting ZnO:Ga Thin Films Grown by Pulsed Laser Deposition.

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  • Suzuki Akio
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University, 3–1–1 Nakagaito Daito, Osaka 574, Japan
  • Matsushita Tatsuhiko
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University, 3–1–1 Nakagaito Daito, Osaka 574, Japan
  • Sakamoto Yoshiaki
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University, 3–1–1 Nakagaito Daito, Osaka 574, Japan
  • Wada Naoki
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University, 3–1–1 Nakagaito Daito, Osaka 574, Japan
  • Fukuda Tomoya
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University, 3–1–1 Nakagaito Daito, Osaka 574, Japan
  • Fujiwara Hideki
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University, 3–1–1 Nakagaito Daito, Osaka 574, Japan
  • Okuda Masahiro
    Department of Physics and Electronics, College of Engineering, University of Osaka Prefecture, 1–1 Gakuen–cho, Sakai, Osaka 593, Japan

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  • Surface Flatness of Transparent Conduct

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ZnO films doped with 4, 7 and 13 wt% Ga2O3 (GZO films) have been deposited on glass and quartz substrates using a pulsed laser deposition technique with an ArF laser (λ=193 nm). In all experiments, a repetition rate of 10 Hz, an energy density of 1 J/cm2, and an irradiation time of 20-30 min (12000-18000 shots) were used. An optical transmittance of more than 90% was obtained in the visible region of the spectrum for 150-200-nm-thick GZO (7 wt%) films deposited at substrate temperatures of 200-300° C. The lowest resistivity of 2.08× 10-4 Ω·cm and the lowest sheet resistance of 14.5 Ω/sq were obtained for GZO (7 wt%) films grown at a substrate temperature of 200° C. It was found from AFM images that there were minute irregularities (50-70 nm in size, average roughness 0.8 nm) on the surfaces of GZO (7 wt%) films grown at substrate temperatures of 25-300° C.

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