Capture Cross Section of Electric-Stress-Induced Interface States in (100) Si Metal/Oxide/Semiconductor Capacitors.
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- Inoue Masao
- Department of Electrical Engineering, Faculty of Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565, Japan
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- Shimada Akihiro
- Department of Electrical Engineering, Faculty of Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565, Japan
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- Shirafuji Junji
- Department of Electrical Engineering, Faculty of Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565, Japan
書誌事項
- タイトル別名
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- Capture Cross Section of Electric-Stres
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抄録
The capture cross section of interface states induced by Fowler-Nordheim tunneling electron injection in (100) n- and p-Si metal/oxide/semiconductor (MOS) capacitors has been measured as a function of interface-state density by means of the ac conductance method. In n-Si MOS capacitors two interface states are generated in the upper half of the Si gap, while in p-Si MOS capacitors only one interface state is observed in the lower half of the gap. The capture cross section for electrons (upper half of the gap) and for holes (lower half of the gap) tends to decrease when the interface-state densities exceed about 1.5×1011 cm-2eV-1. This behavior is explained by taking the occurrence of additional tunneling to defect states in the oxide into account. Moreover, the difference in the slopes of the descending characteristics of electron and hole capture cross sections is used to estimate the effective-mass ratio of an electron and a hole in the SiO2 gap.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 35 (12A), 5915-5920, 1996
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206250575360
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- NII論文ID
- 210000039957
- 110003905469
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 4121624
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可