High-Voltage Emitter Short Diode (ESD).

• Kitagawa Mitsuhiko

  Toshiba Corporation, 1, Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan

• Matsushita Ken–ichi

  Toshiba Corporation, 1, Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan

• Nakagawa Akio

  Toshiba Corporation, 1, Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan

抄録

We report the effects of emitter short structures, ESD(a) and ESD(b), as well as the effect of a very shallow emitter, on the reverse recovery characteristics for 4 kV high-voltage diodes. It was found that a diode with a shallow p-emitter and emitter short structures attains half the reverse recovery current I _rr, compared to conventional punch-through p-i-n diodes. ESD has a further advantage in that the leakage current is as low as that of conventional p-n junction diodes, even at 125^° C. ESD structures with a fine n⁺ and p⁺ short structure attain no parasitic effect, even at a current density of 100 A/cm² and di/ dt of -1000 A/µ s.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 35 (12A), 5998-6002, 1996

  The Japan Society of Applied Physics

キーワード

• diode
• p-i-n
• punch-through
• high-voltage diode
• shallow emitter
• emitter short structure
• reverse recovery
• reverse recovery current

詳細情報

• CRID: 1390001206250509056
• NII論文ID: 210000039974
• NII論文ID: 110003905484
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.35.5998
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 4121615
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4121615
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.35.5998
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.35.5998/pdf
• 本文言語コード: en
• データソース種別:
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• 抄録ライセンスフラグ: 使用不可