Annealing Properties of Defects in B⁺- and F⁺-Implanted Si Studied Using Monoenergetic Positron Beams

• Uedono Akira

  Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan

• Kitano Tomohisa

  ULSI Device Development Laboratories, NEC Corporation 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan

• Hamada Kouji

  ULSI Device Development Laboratories, NEC Corporation 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan

• Moriya Tsuyoshi

  Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan

• Kawano Takao

  Radioisotope Center, University of Tsukuba, Tsukuba, Ibaraki 305, Japan

• Tanigawa Shoichiro

  Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan

• Suzuki Ryoichi

  Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan

• Ohdaira Toshiyuki

  Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan

• Mikado Tomohisa

  Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan

書誌事項

タイトル別名

• Annealing Properties of Defects in B+- and F+-Implanted Si Studied Using Monoenergetic Positron Beams.
• Annealing Properties of Defects in B+-

抄録

Annealing properties of defects in F⁺- and B⁺-implanted Si were studied using monoenergetic positron beams. For F⁺-implanted specimen with a dose of 2× 10¹³ F/cm², before annealing treatment, the mean size of the open volume of defects was estimated to be close to the size of divacancies. After rapid thermal annealing (RTA) at 700^° C, vacancy-fluorine complexes and vacancy clusters were formed. The mean size of the open volume for the vacancy-fluorine complexes was estimated to be close to the size of monovacancies, and their annealing temperature was determined to be 800^° C. For F⁺-implanted specimen with a dose of 4× 10¹⁵ F/cm², complexes between vacancy clusters and fluorine atoms were introduced during solid-phase epitaxial growth of the amorphous region, and they were observed even after RTA at 1100^° C. Effects of additional B⁺ implantation on annealing properties of defects are also discussed.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 36 (5A), 2571-2580, 1997

  The Japan Society of Applied Physics

キーワード

• defect
• vacancy
• fluorine
• boron
• ion implantation
• Si
• positron annihilation
• monoenergetic positron beam

詳細情報

• CRID: 1390001206250017152
• NII論文ID: 110003905835
• NII論文ID: 210000041026
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.36.2571
• COI: 1:CAS:528:DyaK2sXjsFCgu7o%3D
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 4219704
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4219704
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.36.2571
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.36.2571/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可