The Microstructure of As Precipitates in Si Delta-Doped GaAs Grown by Low-Temperature Molecular Beam Epitaxy

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Author(s)

Journal

  • Japanese Journal of Applied Physics Pt. 1 Regular Papers, Short Notes & Review Papers

    Japanese Journal of Applied Physics Pt. 1 Regular Papers, Short Notes & Review Papers 36(11), 6614-6619, 1997-11-15

    The Japan Society of Applied Physics

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Codes

  • NII Article ID (NAID)
    110003905911
  • NII NACSIS-CAT ID (NCID)
    AA10457675
  • Text Lang
    ENG
  • Article Type
    ART
  • Journal Type
    大学紀要
  • ISSN
    00214922
  • NDL Article ID
    4371423
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z53-A375
  • Data Source
    CJP  NDL  NII-ELS 
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