Study on Zr-Si/W (100) Surface at High Temperatures by Combined Surface Analysis Techniques

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Author(s)

    • KAWANO Takashi
    • Department of Applied Physics, Faculty of Engineering, Osaka University
    • KIMURA Yoshihide
    • Department of Applied Physics, Faculty of Engineering, Osaka University
    • SHIMIZU Ryuichi
    • Department of Applied Physics, Faculty of Engineering, Osaka University

Abstract

The basic mechanism of electron emissivity of a Zr-Si/W(100) surface, which has attracted much attention as a thermal field emitter for practical use, was studied by Auger electron spectroscopy, ion scattering spectroscopy and work function measurements. The results show that the topmost atomic layer consists of Zr and Si at operating conditions (~ 1300 K, 10<SUP>-9</SUP> Torr), the work function of which is slightly reduced by an order of half an eV from that of a clean W(100) surface.

Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics 37(8), 4561-4562, 1998-08-15

    The Japan Society of Applied Physics

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Codes

  • NII Article ID (NAID)
    110003906715
  • NII NACSIS-CAT ID (NCID)
    AA10457675
  • Text Lang
    ENG
  • Article Type
    SHO
  • ISSN
    00214922
  • Data Source
    CJP  NII-ELS  J-STAGE 
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