Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin Films

• Ito Kentaro

  Department of Electronics, Faculty of Engineering, Shinshu University

• Nakazawa Tatsuo

  Department of Electronics, Faculty of Engineering, Shinshu University

抄録

Quaternary stannite-type semiconductor films of Cu₂CdSnS₄ and Cu₂ZnSnS₄ with (112) orientation were deposited on heated glass substrates using atom beam sputtering. These p-type films showed resistivities which were decreasing functions of the substrate temperature up to 240°C. The films had an absorption coefficient larger than 1 ×10⁴ cm⁻¹ in the visible wavelength range. The direct optical band gaps of the (112) oriented polycrystalline films were estimated as 1.06 eV and 1.45 eV for Cu₂CdSnS₄ and Cu₂ZnSnS₄, respectively.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 27 (11), 2094-2097, 1988

  社団法人応用物理学会

キーワード

• stannite-type
• compound semiconductor
• Cu<SUB>2</SUB>CdSnS<SUB>4</SUB>
• Cu<SUB>2</SUB>ZnSnS<SUB>4</SUB>
• thin film
• optical band gap

詳細情報

• CRID: 1570291227434471424
• NII論文ID: 110003907947
• NII書誌ID: AA10457675
• 本文言語コード: en
• データソース種別:
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