Red Electroluminescence and Crystallinity of ZnS:SmF<SUB>3</SUB> Thin Films

• Ohwaki Junichi

  Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Tsujiyama Bunjiro

  Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Kozawaguchi Haruki

  Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

抄録

The dependence of the red emission characteristics (emission efficiency, brightness and emission decay time) and crystallinity of ZnS:SmF₃ thin-film electroluminescent (TFEL) devices upon fabrication parameters such as the SmF₃ concentration and substrate temperature during evaporation, has been investigated. The electroluminescent characteristics are considered to be influenced more by the SmF₃ concentration and the grain height in the film thickness direction, than by the cubic ZnS structure {111} plane orientation and the film uniformity, or by the degree to which the cubic {111} plane is oriented parallel to the substrate. A bright red electroluminescence of 1000 cd/m² under 5 kHz sinusoidal voltage excitation and an emission efficiency of 0.078 lm/W are obtained in these ZnS:SmF₃ TFEL devices.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 23 (6), 699-703, 1984

  社団法人応用物理学会

詳細情報

• CRID: 1570009752452838400
• NII論文ID: 110003910133
• NII書誌ID: AA10457675
• 本文言語コード: en
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