Energy Distribution of Energetic Oxygen Atoms in the Sputtering of ZnO

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Author(s)

Abstract

Energetic neutral oxygen atoms bombarding the substrate in DC diode sputtering and DC planar magnetron sputtering were detected by a time-of-flight apparatus. In analyzing the time-of-flight spectrum, the energy distribution of the energetic oxygen atoms was computed by the fast Fourier transformation (FFT) method. The energy of the oxygen atoms bombarding the substrate was found to be distributed from 300 to <I>eV</I><SUB>T</SUB> electron volts, the maximum energy which negative oxygen ions gain in the cathode fall in DC diode sputtering. The mean energy of the energetic oxygen atoms was estimated to be nearly <I>eV</I><SUB>T</SUB>⁄2 electron volts. In planar magnetron sputtering, the flux of the energetic oxygen atoms showed a nearly monochromatic energy distribution.

Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics 24pt1(1), 35-39, 1985

    The Japan Society of Applied Physics

Codes

  • NII Article ID (NAID)
    110003910267
  • NII NACSIS-CAT ID (NCID)
    AA10457675
  • Text Lang
    ENG
  • Data Source
    NII-ELS  J-STAGE 
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