Transport of Charge Carriers in Methylbixin Crystals: Photoconductivity Decay Measurements

• Pal Prabir

  Optics Department, Indian Association for the Cultivation of Science

• Ghosh Dilip

  Optics Department, Indian Association for the Cultivation of Science

• Jain K. M.

  Optics Department, Indian Association for the Cultivation of Science

• Misra T. N.

  Optics Department, Indian Association for the Cultivation of Science

抄録

The energy distribution of gap states in methylbixin crystallites has been investigated by photoconductivity decay measurements. The results show that the shallow states decrease exponentially with characteristic temperature T_c∼900 K at an applied field of 1.77×10³ V/cm. T_c is independent of sample temperature but depends inversely on applied field. It is suggested that field effect on T_c may arise from the field effect on trapping rate.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 26 (2), 298-299, 1987

  社団法人応用物理学会

詳細情報

• CRID: 1571698602313017344
• NII論文ID: 110003911144
• NII書誌ID: AA10457675
• 本文言語コード: en
• データソース種別:
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