Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff.

DOI Web Site Web Site Web Site 被引用文献32件 参考文献32件
  • Kelly Michael K.
    Walter Schottky Institut, Technische Universität München, Am Coulombwall, 85748 Garching, Germany
  • Vaudo Robert P.
    Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, Connecticut 06810–4169, U. S. A.
  • Phanse Vivek M.
    Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, Connecticut 06810–4169, U. S. A.
  • Görgens Lutz
    Walter Schottky Institut, Technische Universität München, Am Coulombwall, 85748 Garching, Germany
  • Ambacher Oliver
    Walter Schottky Institut, Technische Universität München, Am Coulombwall, 85748 Garching, Germany
  • Stutzmann Martin
    Walter Schottky Institut, Technische Universität München, Am Coulombwall, 85748 Garching, Germany

この論文をさがす

抄録

Free-standing GaN, nearly equal in area to the original 2 inch wafer, was produced from 250-300 μm thick GaN films grown on sapphire by hydride vapor phase epitaxy (HVPE). The thick films were separated from the growth substrate by laser-induced liftoff, using a pulsed laser to thermally decompose a thin layer of GaN at the film-substrate interface. Sequentially scanned pulses were employed and the liftoff was performed at elevated temperature (>600°C) to relieve postgrowth bowing. After liftoff, the bow is only slight or absent in the resulting free GaN.

収録刊行物

被引用文献 (32)*注記

もっと見る

参考文献 (32)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ