Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength.

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  • Eliseev Petr G.
    Nitride Photonic Semiconductor Laboratory, SVBL, The University of Tokushima, 2–1 Minamijyosanjima, Tokushima 770–8506, Japan
  • Sun Hong–Bo
    Nitride Photonic Semiconductor Laboratory, SVBL, The University of Tokushima, 2–1 Minamijyosanjima, Tokushima 770–8506, Japan
  • Juodkazis Saulius
    Nitride Photonic Semiconductor Laboratory, SVBL, The University of Tokushima, 2–1 Minamijyosanjima, Tokushima 770–8506, Japan
  • Sugahara Tomoya
    Department of Electrical and Electronic Engineering, The University of Tokushima, 2–1 Minamijyosanjima, Tokushima 770–8506, Japan
  • Sakai Shiro
    Department of Electrical and Electronic Engineering, The University of Tokushima, 2–1 Minamijyosanjima, Tokushima 770–8506, Japan
  • Misawa Hiroaki
    Department of Ecosystem Engineering, The University of Tokushima, 2–1 Minamijyosanjima, Tokushima 770–8506, Japan

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The laser-induced damage of epitaxially grown GaN semiconductor material is investigated for the first time by illumination of the c-plane by sub-picosecond laser pulses at the wavelength of 400 nm. The surface damage was investigated by optical and atomic force microscopies. The threshold fluence for ablation damage is determined to be ~5.4 J/cm2 for pulse width of 150 fs. An application is demonstrated for laser-beam processing by the formation of clean dips on the GaN surface to depths of 240 nm in a single shot.

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