Extraction of the Capacitance of a Metal Oxide Semiconductor Tunnel Diode (MOSTD) Biased in Accumulation

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Author(s)

Abstract

We present a method to extract the capacitance of a metal oxide semiconductor tunnel diode (MOSTD) biased in accumulation which has been undeterminable by the conventional capacitance-voltage method. An MOSTD is modeled by a parallel pair of a capacitor and a resistor describing the oxide in series with another resistor associated with the substrate. All the three equivalent circuit elements are then extractable by evaluating the impedance spectra of the MOSTD “only” at the characteristic frequency where the magnitude of the imaginary part of the impedance reaches the maximum. The effectiveness of the method is demonstrated with the MOSTDs with 2.5 nm thick oxides.

Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics 38(8), L845-L847, 1999-08-01

    The Japan Society of Applied Physics

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Codes

  • NII Article ID (NAID)
    110003921362
  • NII NACSIS-CAT ID (NCID)
    AA10650595
  • Text Lang
    ENG
  • Article Type
    Journal Article
  • Journal Type
    大学紀要
  • ISSN
    00214922
  • NDL Article ID
    4821867
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z54-J337
  • Data Source
    CJP  CJPref  NDL  NII-ELS  J-STAGE 
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