Extraction of the Capacitance of a Metal Oxide Semiconductor Tunnel Diode(MOSTD) Biased in Accumulation.

• Matsumura Mieko

  Texas Instruments Tsukuba Research and Development Center, Ltd., 17 Miyukigaoka, Tsukuba, Ibaraki 305–0841, Japan

• Hirose Yutaka

  Texas Instruments Tsukuba Research and Development Center, Ltd., 17 Miyukigaoka, Tsukuba, Ibaraki 305–0841, Japan

抄録

We present a method to extract the capacitance of a metal oxide semiconductor tunnel diode (MOSTD) biased in accumulation which has been undeterminable by the conventional capacitance-voltage method. An MOSTD is modeled by a parallel pair of a capacitor and a resistor describing the oxide in series with another resistor associated with the substrate. All the three equivalent circuit elements are then extractable by evaluating the impedance spectra of the MOSTD “only” at the characteristic frequency where the magnitude of the imaginary part of the impedance reaches the maximum. The effectiveness of the method is demonstrated with the MOSTDs with 2.5 nm thick oxides.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 38 (8A), L845-L847, 1999

  The Japan Society of Applied Physics

キーワード

• MOS tunnel diode
• ultrathin oxide
• equivalent circuit analysis
• impedance analysis
• C- V method

詳細情報

• CRID: 1390282681228030976
• NII論文ID: 210000046703
• NII論文ID: 110003921362
• NII書誌ID: AA10650595
• DOI: 10.1143/jjap.38.l845
• COI: 1:CAS:528:DyaK1MXlt1CjtLw%3D
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• NDL書誌ID: 4821867
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4821867
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.38.L845
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.38.L845/pdf
• 本文言語コード: en
• データソース種別:
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  • NDL
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