Atomically Resolved Image of Cleaved GaAs(110) Surface Observed with an Ultrahigh Vacuum Atomic Force Microscope.

DOI Web Site Web Site 被引用文献7件 参考文献13件
  • Ohta Masahiro
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima, Hiroshima 724
  • Sugawara Yasuhiro
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima, Hiroshima 724
  • Hontani Kouji
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima, Hiroshima 724
  • Morita Seizo
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima, Hiroshima 724
  • Osaka Fukunobu
    Optoelectronics Technology Research Laboratory, Tsukuba, Ibaraki 300–26
  • Suzuki Mineharu
    NTT Interdisciplinary Research Laboratories, Atsugi, Kanagawa 243–01
  • Nagaoka Hideki
    Research Department, Olympus Optical Co., Ltd., Hachioji, Tokyo 192
  • Mishima Shuzo
    Research Department, Olympus Optical Co., Ltd., Hachioji, Tokyo 192
  • Okada Takao
    Research Department, Olympus Optical Co., Ltd., Hachioji, Tokyo 192

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The first demonstration of atomic-resolution imaging of a GaAs(110) surface with an ultrahigh vacuum atomic force microscope (UHV AFM) is performed. A rectangular lattice with spacing of 5.7± 0.5 Å× 4.0± 0.4 Å is resolved. This result suggests that the UHV AFM has potential capability for investigating semiconductor surfaces having dangling bonds on an atomic scale.

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