Spatial Distribution and Its Phase Transition of Densely Contact-Electrified Electrons on a Thin Silicon Oxide.

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  • Sugawara Yasuhiro
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Morita Seizo
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Fukano Yoshinobu
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Uchihashi Takayuki
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Okusako Takahiro
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Chayahara Ayumi
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Yamanishi Yoshiki
    Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd., Amagasaki 660
  • Oasa Takahiko
    Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd., Amagasaki 660

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We investigated the spatial distribution of densely contact-electrified electrons on a silicon oxide layer in air with a modified AFM. From the observed full width at half-maximum (FWHM) and the peak value, we found that the spatial stable-unstable phase transition occurs. We also found, for the first time, that an unstable state exists around the stable state, and that the boundary of the stable state collapses into the unstable state. We also found that the stable state turns into the unstable state by a spatial phase transition and subsequently into the trapped state.

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