Spatial Distributions of Densely Contact-Electrified Charges on a Thin Silicon Oxide.

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  • Sugawara Yasuhiro
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Morita Seizo
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Fukano Yoshinobu
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Uchihashi Takayuki
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Okusako Takahiro
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Chayahara Ayumi
    Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 724
  • Yamanishi Yoshiki
    Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd., Amagasaki 660
  • Oasa Takahiko
    Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd., Amagasaki 660

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The spatial distributions of densely contact-electrified charges on silicon oxide were investigated in air with an atomic force microscope. We found that the spatial distributions immediately after contact electrification significantly depended on the sign of the charge. The spatial distributions showed sharp peaks for positive charge but round peaks for negative charge. We conjectured that the sign dependence of the spatial distributions was induced by the forced tunneling process. We also found the other feature of the spatial distributions of the dissipated charge, which seemed to be related to premonitory phenomena of dielectric breakdown for silicon oxide.

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