Artificial Grain Boundary Junctions in BiSrCaCuO Thin Films with (11<I>n</I>) and (001) Orientation

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Author(s)

    • Wada Osamu
    • Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation
    • Tanimura Junji
    • Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation
    • Kataoka Masayuki
    • Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation
    • Ogama Tetsuo
    • Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation

Abstract

Artificial grain boundary junctions in sputtered BiSrCaCuO films on SrTiO<SUB>3</SUB> (110) substrates have been fabricated by controlling the orientation of the films using a MgO buffer layer. A grain boundary with large twist misorientation is formed along the edge of the MgO buffer layer that is placed perpendicular to the [001] direction of the SrTiO<SUB>3</SUB> substrate. The grain boundary junctions thus obtained exhibited clear Shapiro steps in response to microwave irradiation (15.7 GHz). This indicates that the artificial grain boundaries obtained by controlling the orientation of the BiSrCaCuO films behave as a weak link.

Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics 31pt2(3A), L246-L248, 1992

    The Japan Society of Applied Physics

Codes

  • NII Article ID (NAID)
    110003922190
  • NII NACSIS-CAT ID (NCID)
    AA10650595
  • Text Lang
    ENG
  • Data Source
    NII-ELS  J-STAGE 
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