Highly Resistive Iron-Doped AlInAs Layers Grown by Metalorganic Chemical Vapor Deposition

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Author(s)

    • Ishikawa Hideto
    • Sony Corporation Research Center, Fujitsuka-cho, Hodogaya-ku, Yokohama 240
    • Kamada Mikio
    • Sony Corporation Research Center, Fujitsuka-cho, Hodogaya-ku, Yokohama 240
    • Kawai Hiroji
    • Sony Corporation Research Center, Fujitsuka-cho, Hodogaya-ku, Yokohama 240
    • Kaneko Kunio
    • Sony Corporation Research Center, Fujitsuka-cho, Hodogaya-ku, Yokohama 240

Abstract

We report for the first time highly resistive iron-doped AlInAs layers grown by metalorganic chemical vapor deposition (MOCVD) using a popular iron doping source, (C5H5)2Fe. The linear relationship between Fe atom concentration of Fe-doped AlInAs layers, which was measured by SIMS analysis, and (C5H5)2Fe flow rate was obtained. To evaluate the effect of Fe doping quantitatively, samples of Si-doped n-AlInAs layers were prepared. The relation between carrier concentration and Fe atom concentration of the layers suggested that one Fe atom killed one carrier of n-type AlInAs. An Fe-doped AlInAs layer, with undoped AlInAs layers, which had a residual carrier concentration of $1{\sim}2\times 10^{15}$ cm-3, showed highly resistive characteristics. We found a deep trap with an activation energy of 0.7 eV using photoexcited DLTS, which may cause compensation.

Journal

  • Jpn J Appl Phys

    Jpn J Appl Phys 31(4A), L376-L378, 1992-04-20

    The Japan Society of Applied Physics

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