Non-Contact, No Wafer Preparation Deep Level Transient Spectroscopy Based on Surface Photovoltage

• Lagowski Jacek

  Center for Microelectronics Research, University of South Florida

• Morawski Andrzej

  Center for Microelectronics Research, University of South Florida

• Edelman Piotr

  Center for Microelectronics Research, University of South Florida

抄録

We discuss a novel approach to Deep Level Transient Spectroscopy (DLTS) in which the emission of trapped minority carriers is analyzed employing the surface photovoltage (SPV) transient as measured in a non-contact manner on the native depletion barrier on semiconductor surfaces. Optical excitation is used as the trap-filling pulse. Experiments done on n-type GaAs demonstrate that the SPV-DLTS is suitable for wafer-scale, non-contact determination of deep level defects on semiconductor surfaces. The SPV approach can monitor emission rates up to 10⁶ s⁻¹ which is 10² to 10³ above the limit of standard capacitance DLTS. The sensitivity of the method is comparable to that of the oplical capacitance DLTS.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 31 (8), L1185-L1187, 1992

  社団法人応用物理学会

キーワード

• semiconductor characterization
• deep levels
• surface states
• non-contact measurement
• surface photovoltage

詳細情報

• CRID: 1570572702360438912
• NII論文ID: 110003922417
• NII書誌ID: AA10650595
• 本文言語コード: en
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