Heavily B-Doped Epitaxial Si Films Grown by Photochemical Vapor Deposition at Very Low Temperature ( <200° C)
-
- Oshima Takayuki
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan
-
- Abe Katsuya
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan
-
- Yamada Akira
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan
-
- Konagai Makoto
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan
書誌事項
- タイトル別名
-
- Heavily B-Doped Epitaxial Si Films Grown by Photochemical Vapor Deposition at Very Low Temperature (<200.DEG.C.).
この論文をさがす
抄録
Heavily B-doped epitaxial Si films were grown by photochemical vapor deposition (photo-CVD) using a gas mixture of SiH4, H2, SiH2Cl2 and B2H6 in the substrate temperature range of 160-210° C. The electrical and optical properties of the obtained films were evaluated. The most striking result was that B atoms in the as-grown films were almost 100% neutralized even though the hole concentration was increased to 1.3× 1020 cm-3 by annealing. It was found that the hole concentration increased as a stretched-exponential function of the annealing time, and an infrared absorption band at 2210 cm-1, which is regarded as a B-related band, appeared as the B-doping quantity was increased. The neutralization of B is considered to be related to H atoms in the films.
収録刊行物
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 34 (11A), L1425-L1428, 1995
The Japan Society of Applied Physics
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001206245105792
-
- NII論文ID
- 110003922583
- 210000038503
-
- NII書誌ID
- AA10650595
-
- COI
- 1:CAS:528:DyaK2MXpsVaksrk%3D
-
- ISSN
- 13474065
- 00214922
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可