Heavily B-Doped Epitaxial Si Films Grown by Photochemical Vapor Deposition at Very Low Temperature ( <200° C)

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  • Oshima Takayuki
    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan
  • Abe Katsuya
    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan
  • Yamada Akira
    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan
  • Konagai Makoto
    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan

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  • Heavily B-Doped Epitaxial Si Films Grown by Photochemical Vapor Deposition at Very Low Temperature (<200.DEG.C.).

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Heavily B-doped epitaxial Si films were grown by photochemical vapor deposition (photo-CVD) using a gas mixture of SiH4, H2, SiH2Cl2 and B2H6 in the substrate temperature range of 160-210° C. The electrical and optical properties of the obtained films were evaluated. The most striking result was that B atoms in the as-grown films were almost 100% neutralized even though the hole concentration was increased to 1.3× 1020 cm-3 by annealing. It was found that the hole concentration increased as a stretched-exponential function of the annealing time, and an infrared absorption band at 2210 cm-1, which is regarded as a B-related band, appeared as the B-doping quantity was increased. The neutralization of B is considered to be related to H atoms in the films.

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