High-Luminance Green-Emitting Thin-Film Electroluminescent Devices Using ZnGa2O4:Mn Phosphor.

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  • Minami Tadatsugu
    Electron Device System Laboratory, Kanazawa Institute of Technology, 7–1 Ohgigaoka, Nonoichi, Ishikawa 921, Japan
  • Maeno Takanori
    Electron Device System Laboratory, Kanazawa Institute of Technology, 7–1 Ohgigaoka, Nonoichi, Ishikawa 921, Japan
  • Kuroi Yoshihiro
    Electron Device System Laboratory, Kanazawa Institute of Technology, 7–1 Ohgigaoka, Nonoichi, Ishikawa 921, Japan
  • Takata Shinzo
    Electron Device System Laboratory, Kanazawa Institute of Technology, 7–1 Ohgigaoka, Nonoichi, Ishikawa 921, Japan

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  • High-Luminance Green-Emitting Thin-Film Electroluminescent Devices Using ZnGa<sub>2</sub>O<sub>4</sub>:Mn Phosphor
  • High-luminance green-emitting thin-film electroluminescent eevices using ZnGa2O4:Mn phosphor

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Abstract

A high-luminance green-emitting electroluminescent (EL) device fabricated using a manganese-activated zinc gallate ( ZnGa2O4:Mn) thin-film phosphor in conjunction with a thick barium titanate ceramic insulator has been demonstrated. The green emission was observed in EL devices fabricated using as-deposited ZnGa2O4:Mn thin films prepared by rf magnetron sputtering. A higher luminance was attained for EL devices fabricated using ZnGa2O4:Mn thin films postannealed at 1020° C in an argon atmosphere. A luminance of 710 cd/m2 and a maximum luminous efficiency of 1 lm/W were obtained for a ZnGa2O4:Mn thin-film EL device driven by a sinusoidal voltage at 1 kHz. The device when driven at 60 Hz exhibited a luminance of 230 cd/m2.

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