Effects of Annealing on the Structural Properties of GaAs on Si(100) Grown at a Low Temperature by Migration-Enhanced Epitaxy

• Nozawa Kazuhiko

  NTT Basic Research Laboratories

• Horikoshi Yoshiji

  NTT Basic Research Laboratories

Abstract

This paper reports the effects of annealing on the structural properties of GaAs on Si(100) grown at a low temperature by migration-enhanced epitaxy (MEE). Low-temperature MEE growth at 300°C followed by brief postgrowth annealing at 580°C produces better-quality crystals than conventional high-temperature growth. A 6 μm-thick sample produced using this method showed an X-ray diffraction FWHM of 123 arcsec with an etch-pit density of 4×10⁵ cm⁻². This indicates that low-temperature MEE growth can significantly reduce the dislocation density in the GaAs epilayer compared to the conventional two-step growth technique.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 29 (4), L540-L543, 1990

  The Japan Society of Applied Physics

Keywords

• MEE
• GaAs/Si
• annealing
• low-temperature growth
• TEM
• heteroepitaxy
• dislocation density

Details

• CRID: 1570291227384004736
• NII Article ID: 110003923341
• NII Book ID: AA10650595
• Text Lang: en
• Data Source:
  • CiNii Articles