Effect of Discharge Gas Pressure on YBaCuO Epitaxial Film Formation by Reactive RF Magnetron Sputtering

• Sakuta Ken

  Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

• Iyori Masahiro

  Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

• Katayama Yoshitomo

  Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

• Kobayashi Takeshi

  Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

抄録

The in situ epitaxial growth of the YBaCuO film was carried out by the reactive magnetron sputtering under discharging gas pressures ranging from 4–120 Pa. It appeared that the pressure strongly affected not only the deviation of the film composition from the target but also the film crystallinity which is in turn closely correlated to the superconductivity and its stability. In the plasma emission spectra, we found a reduction in the Ar spectrum intensities relative to those of the metal components with increasing pressure.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 29 (4), L611-L613, 1990

  社団法人応用物理学会

キーワード

• YBaCuO
• rf magnetron sputtering
• epitaxial growth
• high pressure
• plasma emission spectroscopy

詳細情報

• CRID: 1573668927104537728
• NII論文ID: 110003923362
• NII書誌ID: AA10650595
• 本文言語コード: en
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