Oxide-Powder-Covered Annealing in GaAs
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Annealing was performed on GaAs single crystals covered with Ga<SUB>2</SUB>O<SUB>3</SUB> powder under reduced pressure. The annealing at 820°C produced a thin film of about 2 μm on the crystal surface. The film was confirmed to be an oxide substance containing β-Ga<SUB>2</SUB>O<SUB>3</SUB>. The Hall effect measurement revealed that, with oxide powder, the surface region where the change of electrical properties can be minimized to a few microns while without oxide powder, this figure increases to over 200 μm. This is explained by the capping effect of the film to prevent a thermal decomposition of GaAs.
- Japanese Journal of Applied Physics
Japanese Journal of Applied Physics 29pt2(7), L1043-L1045, 1990
The Japan Society of Applied Physics