Oxide-Powder-Covered Annealing in GaAs

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Author(s)

Abstract

Annealing was performed on GaAs single crystals covered with Ga<SUB>2</SUB>O<SUB>3</SUB> powder under reduced pressure. The annealing at 820°C produced a thin film of about 2 μm on the crystal surface. The film was confirmed to be an oxide substance containing β-Ga<SUB>2</SUB>O<SUB>3</SUB>. The Hall effect measurement revealed that, with oxide powder, the surface region where the change of electrical properties can be minimized to a few microns while without oxide powder, this figure increases to over 200 μm. This is explained by the capping effect of the film to prevent a thermal decomposition of GaAs.

Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics 29pt2(7), L1043-L1045, 1990

    The Japan Society of Applied Physics

Codes

  • NII Article ID (NAID)
    110003923492
  • NII NACSIS-CAT ID (NCID)
    AA10650595
  • Text Lang
    ENG
  • Data Source
    NII-ELS  J-STAGE 
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