Preparation of Cubic Boron Nitride Films by RF Sputtering

• Mieno Masahiro

  Department of Metallurgy and Materials Science, Faculty of Engineering, University of Tokyo

• Yoshida Toyonobu

  Department of Metallurgy and Materials Science, Faculty of Engineering, University of Tokyo

抄録

Cubic boron nitride (c-BN) films have been prepared by sputtering of a hexagonal BN sintered target under a negative self-bias voltage applied to Si substrates and a sputtering gas composition of Ar/N₂. A c-BN phase was found to be contained only in the films prepared in pure Ar discharge with a negative self-bias above a threshold value. Moreover, the ratio of c-BN to hexagonal boron nitride increased with increasing negative self-bias voltage. The films consisting mainly of the c-BN phase were easily peeled from Si substrates on exposure to air because of their strong compressive stress.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 29 (7), L1175-L1177, 1990

  社団法人応用物理学会

キーワード

• cubic boron nitride
• infrared spectroscopy
• optical emission spectroscopy
• bias sputtering
• compressive stress

詳細情報

• CRID: 1573668927103697792
• NII論文ID: 110003923532
• NII書誌ID: AA10457675
• 本文言語コード: en
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