Observation of Si(001) Surface Domains in Absorption Current Images of an Electron Microscope

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Author(s)

Abstract

We investigated a Si(001) surface by scanning electron microscopy when an electron beam was incident at grazing angles on it. The absorption current images were taken using the signal of the absorbed current in a sample. The 2× 1 domains and the 1× 2 domains were distinguished in the absorption current images, and the contrast of the domains was reversed by changing the incident conditions. The 2× 1 domain has a 2× 1 dimer perpendicular to the incident beam and the 1× 2 dimer is perpendicular to the 2× 1 dimer. The contrast in the absorption current images was due to the anisotropical properties of the dimer on the Si(001) surface; the surface potential or the cross section of the released electrons.

Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics 35(4), L458-L459, 1996-04-01

    The Japan Society of Applied Physics

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Codes

  • NII Article ID (NAID)
    110003925070
  • NII NACSIS-CAT ID (NCID)
    AA10650595
  • Text Lang
    ENG
  • Article Type
    ART
  • ISSN
    00214922
  • Data Source
    CJP  NII-ELS  J-STAGE 
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