Study on Adsorption Behavior of Organic Contaminations on Silicon Surface by Gas Chromatography/Mass Spectrometry.

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  • Takahagi Takayuki
    Department of Electrical Engineering, Faculty of Engineering, Hiroshima University, Higashi–Hiroshima 739, Japan
  • Shingubara Shoso
    Department of Electrical Engineering, Faculty of Engineering, Hiroshima University, Higashi–Hiroshima 739, Japan
  • Sakaue Hiroyuki
    Department of Electrical Engineering, Faculty of Engineering, Hiroshima University, Higashi–Hiroshima 739, Japan
  • Hoshino Kunihiro
    GL Sciences Inc., 237–2 Sayamagahara, Iruma 358, Japan
  • Yashima Hiroshi
    Toray Research Center, Inc., 3–3–7 Sonoyama, Otsu 520, Japan

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タイトル別名
  • Study on Adsorption Behavior of Organic

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We successfully revealed the adsorption behavior of actual organic contaminations on a Si wafer surface using a gas chromatograph/mass spectrometer system with a quartz heat-desorption chamber and a two-step concentration trap. Antioxidants contained in the wafer case material and a monomer and an oligomer from the plastic vessel material used in the production process were confirmed to contaminate the surface of the Si wafer. Organic materials in the atmosphere, such as organic solvents and plasticizers, were also observed to adsorb on the surface during an exposure to a laboratory atmosphere for a few hours. The results suggest that completely surface-cleaned Si wafers should be stored in a stocker in which the amount of organic species in the atmosphere is well controlled.

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