Optical Properties of Strained AlGaN and GaInN on GaN.

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  • Takeuchi Tetsuya
    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan
  • Takeuchi Hideo
    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan
  • Sota Shigetoshi
    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan
  • Sakai Hiromitsu
    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan
  • Amano Hiroshi
    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan
  • Akasaki Isamu
    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan

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タイトル別名
  • Optical Properties of Strained AlGaN an

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The composition of alloys in strained ternary alloy layers, Al xGa1- xN (0<x<0.25) and Ga1- xIn xN (0<x<0.20), on thick GaN was precisely determined using the high-resolution X-ray diffraction profile. The band gap of strained AlGaN is found to increase almost linearly according to the AlN molar fraction, while that of strained GaInN has a large bowing parameter of 3.2 eV.

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