Epitaxial Lateral Overgrowth of GaAs on a Si Substrate

• Yoshinori Ujiie

• Tatau Nishinaga

抄録

Epitaxial lateral overgrowth (ELO) of GaAs on a Si substrate was successfully achieved by a combination of LPE and MBE. To prevent meltback of the Si substrate by Ga solution, a thin GaAs layer (2.4 µm) was grown by MBE prior to the deposition of SiO 2 by P-CVD. Uniform GaAs ELO layers with mirror surface were grown through a line-shaped window cut in SiO 2 film on a Si substrate with a GaAs layer. Chemical etching with an RC-1 etchant showed that there were no etch pits observed in ELO layers except in the region just over the line seed. Although cracks are observed in ELO layers due to the difference in thermal expansion coefficients between GaAs and Si, it is concluded that this technique is promising for obtaining dislocation- free GaAs on a Si substrate.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 28 (3A), L337-, 1989-03-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360003446840027136
• NII論文ID: 110003926833
• NII論文ID: 210000028545
• NII書誌ID: AA10650595
• DOI: 10.1143/jjap.28.l337
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.28.L337
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.28.L337/pdf
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